RMDA29000 Datasheet | Fairchild Semiconductor

June 2004 27- 31 GHz Drive Amplifier MMIC General Description The Fairchild Semiconductor RMDA29000 is a high efficiency driver amplifier designed for use in point to point and point to multi-point radios, and various muni.. cations applications. The RMDA29000 is a 3-stage Ga As MMIC amplifier utilizing our advanced 0.15µm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output. Features - 22d B small signal gain (typ.) - 23d Bm saturated power out (typ.) - Circuit contains individual source Vias - Chip Size 3.41mm x 1.62mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG Rjc Parameter Positive DC Voltage (+5V Typical) Negative DC Voltage Simultaneous (Vd- Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 +8 360 +10 -30 to +85 -55 to +125 38 Units V V V m A d Bm °C °C °C/W ©2004 Fairchild Semiconductor Corporation RMDA29000 Rev. C Electrical Characteristics (At 25°C), 50Ω system, Vd = +5V, Quiescent current (Idg) = 250m A Parameter Frequency Range Gate Supply Voltage1 (Vg) Gain Small Signal Gain Variation vs. Frequency Power Output at 1d Bm pression Power Output Saturated: (Pin = +4d Bm) Drain Current Small Signal Drain Current at P1d B pression Power Added Efficiency (PAE): at P1db OIP32 .. Input Return Loss Output Return Loss Note: 1: Typical range of negative gate voltages is -0.9 to 0.0V to set typical Idq of 250m A. 2: 10MHz tone separation measured at 10d Bm Power Out/tone. Min 27 18 Typ -0.4 22 ±1 21 23 250 270 8 30 10 8 Max 31 28 5 5 Units GHz V d B d B d Bm d Bm m A m A % d Bm d B d B ©2004 Fairchild Semiconductor Corporation RMDA29000 Rev. C Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have Ga As...